BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Low offset voltage
• Full-voltage operation
• Easily driven without buffer
• Low error voltage
• No high-temperature run-away
• Excellent thermal stability
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 500mA |
| Drain-Source Resistance (Rds On) | 5Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Configuration | Single |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 350mW |