Specifications:
Package: TO-220
Drain to Source Voltage: 200V
Current – Continuous Drain(Id): 18A
RDS(on): 160mΩ@10V,7.5A
Pd – Power Dissipation: 130W
Gate Threshold Voltage (Vgs(th)@Id): 4V
Reverse Transfer Capacitance (Crss@Vds): 130pF
Type: 1 N-channel
Input Capacitance(Ciss@Vds): 1.32nF@0V
Gate Charge(Qg): 23nC@10V
Operating Temperature: -55℃~+150℃
Package Includes:
1 x MOSFET IRF640N